Active Member
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[China]
Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
Contact name:Mia
Shenzhen ATFU Electronics Technology ltd |
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FEATURES
• High transition frequency: fT = 200 MHz (typ.)
• Complementary to 2SA1930
Electrical Characteristics (Tc = 25°C)
Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
Collector cut-off current | ICBO | VCB = 180 V, IE = 0 | ― | ― | 5.0 | μA |
Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 | ― | ― | 5.0 | μA |
Collector-emitter breakdown voltage | V (BR) CEO | IC = 10 mA, IB = 0 | 180 | ― | ― | V |
DC current gain | hFE (1) | VCE = 5 V, IC = 0.1 A | 100 | ― | 320 | |
hFE (2) | VCE = 5 V, IC = 1 A | 50 | ― | ― | ||
Collector-emitter saturation voltage | VCE (sat) | IC = 1 A, IB = 0.1 A | ― | 0.16 | 1.0 | V |
Base-emitter voltage | VBE | VCE = 5 V, IC = 1 A | ― | 0.68 | 1.5 | V |
Transition frequency | fT | VCE = 5 V, IC = 0.3 A | ― | 200 | ― | MHz |
Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | ― | 16 | ― | pF |
Absolute Maximum Ratings (Tc = 25°C)
Characteristics | Symbol | Rating | Unit | |
Collector-base voltage | VCBO | 180 | V | |
Collector-emitter voltage | VCEO | 180 | V | |
Emitter-base voltage | VEBO | 5 | V | |
Collector current | IC | 2 | A | |
Base current | IB | 1 | A | |
Collector power dissipation | Ta = 25°C | PC | 2.0 | W |
Tc = 25°C | 20 | |||
Junction temperature | Tj | 150 | °C | |
Storage temperature range | Tstg | −55 to 150 | °C | |
Applications
• Power Amplifier Applications
• Driver Stage Amplifier Applications
