Active Member
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[China]
Address: Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact name:Chen
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD |
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3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system
Features:
Descriptions:
Applications:
| Part No. | Chip Material | Lens Color | Source Color |
| DL-R1206PD-1PD120 | Silicon | Black | Phototransistor |
Absolute Maximum Ratings (Ta=25℃)
| Parameters | Symbol | Rating | Unit |
Power Dissipation At (or below) 25℃ free Air Temperature | PD | 100 | mW |
| Collector-Emitter Voltage | VCEO | 30 | V |
| Emitter-Collector-Voltage | VECO | 5 | V |
| Collector Current | IC | 20 | mA |
| Operating Temperature | Topr | -40 to +80 | ℃ |
| Storage Temperature | Tstg | -40 to +85 | ℃ |
| Soldering Temperature | Tsol | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | --- | --- | V | IC=100μA, Ee=0mW/cm² |
| Emitter-Collector Breakdown Voltage | BVECO | 5 | --- | --- | V | IE=100μA, Ee=0mW/cm² |
| Collector-Emitter Saturation Voltage | VCE(SAT) | --- | --- | 0.40 | V | IC=2mA, Ee=1mW/cm² |
| Collector Dark Current | ICEO | --- | --- | 100 | nA | VCE=20V, Ee=0mW/cm² |
| On State Collector Current | IC(ON) | 0.10 | 0.50 | --- | mA | VCE=5V, Ee=1mW/cm² |
| Optical Rise Time (10% to 90%) | TR | --- | 15 | --- | μs | VCE=5V, IC=1mA, RL=1000Ω |
| Optical Fall Time (90% to 10%) | TF | --- | 15 | --- | ||
| Reception Angle | 2θ1/2 | --- | 30 | --- | Deg | |
| Wavelength Of Peak Sensitivity | λP | --- | 940 | --- | nm | |
| Rang Of Spectral Bandwidth | λ0.5 | 700 | --- | 1200 | nm |
*1: Pulse Width=100μs, Duty Cycle=1%.
*2: For 10 Seconds.
*3: AC For 1 minute, R.H.=40%~60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
Electrical Optical Characteristics (Ta=25℃)
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test condition | |
| Input | Forward Voltage | VF | --- | 1.20 | 1.50 | V | IF=20mA |
| Reverse Current | IR | --- | --- | 10 | µA | VR=4V | |
| Terminal Capacitance | Ct | --- | 30 | 250 | pF | V=0V, f=1KHz | |
| Output | Collector Dark Current | ICEO | --- | --- | 100 | nA | Vce=20V, IF=0 mA |
| Collector-Emitter Breakdown Voltage | VCEO | 35 | --- | --- | V | IC=0.1mA, IF=0mA | |
Emitter –Collector Breakdown Voltage | VECO | 6 | --- | --- | V | IE=10uA, IF=0mA | |
| Transfer Characteristics | Collector Current | IC | 2.50 | --- | 30 | mA | VCE=5V, IF=5mA |
| Current Transfer Ratio * | CTR | 50 | --- | 600 | % | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | --- | 0.10 | 0.20 | V | IF=20mA Ic=1mA | |
| Isolation Resistance | RISO | 5x1010 | 5x1011 | --- | Ω | DC 500V 40%~60% R.H. | |
| Floating Capacitance | Cf | --- | 0.6 | 1 | pF | V=0V, f=1MHz | |
| Cut-Off Frequency | fc | --- | 80 | --- | kHz | VCE =5V Ic=2mA RL=100 Ω -3dB | |
Rise Time (10% to 90%) | TR | --- | 4 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | |
Fall Time (90% to 10%) | TF | --- | 3 | 18 | |||
* CRT=IC / IF × 100%.
Rank Table Of Current Transfer Ratio (CTR)
| Rank Mark | Min. (%) | Max. (%) |
| L | 50 | 100 |
| A | 80 | 160 |
| B | 130 | 260 |
| C | 200 | 400 |
| D | 300 | 600 |
| L or A or B or C or D | 50 | 600 |
Notes:
1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.
2. A range from 30cm to the arrival distance. Average value of 50 pulses
Package Dimension:
