Active Member
|
[China]
Address: Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact name:Chen
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD |
|
|
1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led
Features:
Applications:
The DL-HP10SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Descriptions:
1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 1000 | mW |
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) | IFP | 1.00 | A |
| Forward Current | IF | 350 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -10℃ to +70℃ | |
| Storage Temperature Range | Tstg | -20℃ to +80℃ | |
| Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity | Ie | 110 | 180 | --- | mW/Sr | IF=350mA |
| Viewing Angle * | 2θ1/2 | --- | 120 | --- | Deg | (Note 1) |
| Peak Emission Wavelength | λp | --- | 850 | --- | nm | IF=350mA |
| Spectral Bandwidth | △λ | --- | 45 | --- | nm | IF=350mA |
| Forward Voltage | VF | 1.30 | 1.50 | 1.80 | V | IF=350mA |
| Reverse Current | IR | --- | --- | 50 | µA | VR=5V |
Notes:
1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
