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Large Birefringence Diode Pumping Uniaxial Nd YVO4 Laser Crystals

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Large Birefringence Diode Pumping Uniaxial Nd YVO4 Laser Crystals

Country/Region china
City & Province hefei anhui
Categories Laser Equipment Parts
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Product Details

Nd:YVO4

Nd:YVO4 is the most efficient laser host crystal for diode pumping among the current commercial laser crystals, especially, for low to middle power density. This is mainly for its absorption and emission features surpassing Nd:YAG. Pumped by laser diodes, Nd:YVO4 crystal has been incorporated with high NLO coefficient crystals ( LBO, BBO, or KTP) to frequency-shift the output from the near infrared to green, blue, or even UV. This incorporation to construct all solid state lasers is an ideal laser tool that can cover the most widespread applications of lasers, including machining, material processing, spectroscopy, wafer inspection, light displays, medical diagnostics, laser printing, and data storage, etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets traditionally dominated by water-cooled ion lasers and lamp-pumped lasers, especially when compact design and single-longitudinal-mode outputs are required.

 

Nd:YVO4's advantages over Nd:YAG:
• As high as about five times larger absorption efficient over a wide pumping bandwidth around 808 nm ( therefore, the dependency on pumping wavelength is much lower and a strong tendency to the single mode output);
• As large as three times larger stimulated emission cross-section at the lasing wavelength of 1064nm;
• Lower lasing threshold and higher slope efficiency;
• As a uniaxial crystal with a large birefringence, the emission is only a linearly polarized.

 

Specifications

MaterialNd:YVO4
Dopant Concentration0.1 – 3at%
OrientationA-cut or C-cut
Dimension toleranceW(+/-0.1)×H(+/-0.1)×L(+/-0.5)mm
wavefront distortion<λ/8 @633nm
Chamfer<0.15×45°
Clear Aperture>90%
Flatnessλ/10@ 633 nm
Chips<0.1mm
Scratch/Dig10-5@MIL-0-13830A
Perpendicularity≤5 arc minutes
Parallelism<20 arc seconds
Damage threshold1GW/cm2@1064nm 10ns 10HZ
Anti-Reflection coatingR<0.2%@1064nm

 

 

Properties

Crystal structureTetragonal System
Point GroupD4h
Density4.22 g/cm2
Mohs Hardness4-5
Thermal Expansion Coefficientαa=4.43×10-6/K αc=11.37×10-6/K
Thermal Conductivity Coefficient⊥C: 51mw/cm.k //C: 52.3 mw /cm.k(300k)
Laser Wavelength1064nm, 1342nm
Pump wavelength808nm
Stimulated emission cross-section25×10-19cm2 @ 1064nm
Fluorescent lifetime90μs(1% Nd doping)
Absorption coefficient31.4cm-1 @810nm
Intrinsic loss0.02cm-1 @1064nm
Gain bandwidth0.96nm@1064nm
Polarized laser emissionp polarization; parallel to optic axis(c-axis)

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