W25Q80DVZPIG NOR Flash Memory IC Chip 8Mbit 104MHz 2.7V To 3.6V WSON-8

W25Q80DVZPIG NOR Flash Memory 8Mbit 104MHz 2.7V to 3.6V SPI Flash WSON-8

Specifications

Description 

The W25Q80DV/DL (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The W25Q80DV operates on a single 2.7V to 3.6V and the W25Q80DL operateds on a single 2.3V to 3.6V power supply with current consumption as low as 1µA for power-down.

The W25Q80DV/DL array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80DV/DL has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)

Pad Configuration WSON 6x5-mm, USON 2X3-mm

Figure 1b.Pad Assignments, 8-pad WSON 6x5-mm, USON 2x3-mm (Package Code ZP & UX)

Features

• Highest Performance Serial Flash

  – W25Q80DV

   104MHz Dual/Quad SPI clocks

   208/416MHz equivalent Dual/Quad SPI

   50MB/S continuous data transfer rate

  – W25Q80DL

   80MHz Dual/Quad SPI clocks

   160/320MHz equivalent Dual/Quad SPI

   40MB/S continuous data transfer rate

• Low Power, Wide Temperature Range

  – W25Q80DV: Single 2.7 to 3.6V supply

  – W25Q80DL: Single 2.3 to 3.6V supply

  – <1µA Power-down(typ.)

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