ShenZhen Mingjiada Electronics Co.,Ltd. |
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Silicon Carbide DF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW 2N-Channel
Product Description Of DF23MR12W1M1PB11BPSA1
DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET Module, 2 N-Channel (Dual) Transistors, Silicon Carbide (SiC) Module.
Specification Of DF23MR12W1M1PB11BPSA1
Part Number | DF23MR12W1M1PB11BPSA1 |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
Power - Max | 20mW |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | AG-EASY1B-2 |
Features Of DF23MR12W1M1PB11BPSA1
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample
free?
A: Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without
stock,we will confirm lead time for you based on your order
quantity.