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SILICON NITRIDE (SI3N4) SEALING PIPE & SEALING VALVE FOR ALUMINUM INDUSTRY

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

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SILICON NITRIDE (SI3N4) SEALING PIPE & SEALING VALVE FOR ALUMINUM INDUSTRY

Country/Region china
City & Province zhengzhou henan
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Product Details

 

Silicon Nitride (Si3N4) Sealing Pipe & Sealing Valve

 

High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.

 

 

The high-temperature strength of silicon nitride ceramics is very good, which ensures that the sealed tube can still be used for a long time under frequent operating conditions.In view of the brittleness of silicon nitride ceramics, large mechanical shocks should be avoided, so attention should be paid to the design and installation of the lifting transmission device.

 

 

 

Advantage:

 

  • The high density, high strength and high thermal shock resistance of silicon nitride ceramics determine that it is the best choice for sealing tubes in low pressure die casting.

  • Compared with aluminum titanate and alumina ceramics, silicon nitride has superior wear resistance, which can ensure the airtightness of the sealed tube for a long time;

     

 

Silicon Nitride Related Data

 

Main component99%Al2O3S-SiCZrO2Si3N4
Physical
Property
Densityg/cm33.93.163.2
Water Absorption%00.100.1
Sinter Temperature°C1700220015001800
Mechanical
Property
Rockwell HardnessHV1700220013001400
Bend Strengthkgf/mm23500400090007000
Compression IntensityKgf/mm230000200002000023000
Thermal
Property
Maximum working
temperature
°C1500160013001400
thermal expansion
coefficient
0-1000°C
/°C8.0*10-64.1*10-6(0-500°C)9.5*10-62.0*10-6(0-500°C)
5.2*10-6(500-1000°C)4.0*10-6(500-1000°C)
Thermal Shock resistanceT(°C)200250300400-500
Thermal ConductivityW/m.k(25°C31100325
300°C)16100325
Electrical
Property
Resisting rate of Volume◎.cm    
20°C>1012106-108>1010>1011
100°C1012-1013>1011
300°C>1012>1011
Insulation Breakdown
Intensity
KV/mm18semiconductor917.7
Dielectric Constant (1 MHz)(E)10297
Dielectric Dissipation(tg o)0.4*10-3

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