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Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
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High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.
Special structural parts with high requirements for thermal shock resistance are areas where silicon nitride ceramic materials can be vigorously developed in the future. In application areas with high temperature, strong corrosion, and high wear resistance, silicon nitride ceramics are used to replace some cemented carbide, alumina, Materials such as zirconia and silicon carbide will become a trend.
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
