Home Companies BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

PSHI 0532.........

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
Active Member

Contact Us

[China] country

Address: 1/F, No.23 Huoju Street, ChangpingPark, Beijing, China,102200

Contact name:Alice

Inquir Now

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

PSHI 0532.........

Country/Region china
City & Province beijing beijing
InquireNow

Product Details

1.feature

●ASIC 3-level IGBT driver
●Suitable for all IGBTs up to 600V/1200V/1700V
● Used to drive the upper/lower bridge arm dual IGBT
●Integrated control signal timing management
●Short circuit and over current protection by VCEsat monitoring
● Active-clamping+dynamic spike restrian
●Isolation due to nanometer amorphous transformer
●Supply undervoltage protection (<12.5V)
● Gate voltage monitoring
● Timing time adjustable externally
●Internal isolated DC/DC power supply
●±25A peak current output
●IGBT gate drive voltage+15V/-9V
●350ns signal conversion time
●110ns error signal feedback time
●100ns narrow pulse inhibit eliminate radio frequency interference
●Max. working frequency 100kHz
●Error chain function, low level active
●Clearance distance from primary side to secondary side is 39mm
PSHI 0532

Absolute Maximum Ratings(Ta=25℃)

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

400

mA

PDC/DC

Total power of DC/DC isolation power output

5

W

Vin

Max. PWM input level(VinI; VinO)

VS+0.7

V

ViH

Max. logic signal input voltage

(External error signal)

VS+0.7

V

IOC

Max. logic signal output currect

(Open-collector output current)

10

mA

IoutAV

Output average current per channel

90

mA

IoutPEAK

Output peak current per channel

±25

A

VCES

IGBT collector-emitter voltage

PSHI 0532

PSHI 0532 Pro

--

1200

1700

V

Visol IO

Isolation voltage IN-OUT(1 minute. AC)

PSHI 0532

PSHI 0532 Pro

--

5000

8000

V

Visol AB

Isolation voltage OUT A-OUT B(1 minute. AC)

PSHI 0532

PSHI 0532 Pro

--

4000

5000

V

RGon/off min

Minimal Rgon/Rgoff

1.0

Ω

Qout/pulse

Charge per pulse

±15*

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSW max

Max. working frequency

100

kHz

Top

Operating temperature

-40...+85

Tstg.

Storage temperatature

-45...+85


Electrical Characteristics(Ta=25℃)

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load currect primary

fSW= 0kHz

fSW=20kHz

fSW=50kHz


--

80

100

120



mA

VIT+

Input high level: 15V level

12




V

VIT-

Input low level: 15V level



4.5


V

Rin

Input resistance


33



VG(on)

Turn-on gate voltage


+15



V

VG(off)

Turn-off gate voltage


-9



V

td(on)IO

IN-OUT turn-on delay time


350



ns

td(off)IO

IN-OUT turn-off delay time


350



ns

td(err)

Error signal return delay time

VCEerror happen-error signal output


110



ns

tmd

Narrow pulse restrained


100



ns

VCEstat

Reference voltage for VCEmonitoring

VCE=1700V

VCE=1200V

2

--

--


6.8

--

--


6.2

5.3

V

VLevel

Logic level (External error input; reset signal; mode select)


+8


+15

V

tpReset

Vininput both Low reset time


20



μs

CPS

Primary to secondary capacitance


8



pf

* This value can be expanded externally (on adapter board) by power supply output pins on secondary side.


●Diode-clamped 3-level topology
●Dual PWM control 3-level topology
●SVG
●Inverter
●photovoltaic inverter
●High power UPS
●High power high frequency SMPS


























Hot Products

● ASIC single IGBT driver ● Suitable for multi-level all 6500V HV-IGBTs ● Short circuit and over ...
POWER-SEM Single IGBT Driver 1DI 825 single high-power IGBT driver core Features ● ASIC single IGBT ...
3-level HV IGBT driver, PSHI432EP4-I, plug and play.
3-level IGBT driver, suitable for Infineon IGBT FF300R07PE4, Plug and play. more information, please ...