DS1220Y- 150+ DIP24 720-MIL Extended Module Clock Chip 16k Nonvolatile SRAM
Full Series for DS1220Y-100+120+150+200 IND
FEATURES
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 2k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Full ±10% operating range
Optional industrial temperature range of -40°C to +85°C, designated
IND
DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static,
nonvolatile RAM organized as 2048 words by 8 bits.
Each NV SRAM has a self-contained lithium energy source and control
circuitry
which constantly monitors VCC for an out-of-tolerance condition.
When such a condition occurs,
the lithium energy source is automatically switched on and write
protection is unconditionally enabled to prevent data corruption.
The NV SRAM can be used in place of existing 2k x 8 SRAMs directly
conforming to the popular bytewide 24-pin DIP standard.
The DS1220Y also matches the pinout of the 2716 EPROM or the 2816
EEPROM,
allowing direct substitution while enhancing performance.
There is no limit on the number of write cycles that can be
executed and no additional support circuitry
is required for microprocessor interfacing.
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