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Customized Size Silicon Carbide Substrate Hardness 9.4 Sic Parts For Equipment

SHANGHAI FAMOUS TRADE CO.,LTD

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Address: Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA

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Customized Size Silicon Carbide Substrate Hardness 9.4 Sic Parts For Equipment

Country/Region china
City & Province shanghai shanghai
Categories Steel Sheets
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Product Details

10x10mm 5x5mm customized square sic substrates ,1inch sic wafers,sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer
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we offers semiconductor materials, especially for SiC wafer, SiC substate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers. We has a good relationship with the SiC crystal growth factory and,we own also have the SiC wafer processing technology, established a production line to manufacturer SiC substrate and SiC wafer. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab, we are devoted to continuously improve the quality of SiC wafer, currently substates and develop large size substrates.
 
Application areas
1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
 
Advantagement                               
• Low lattice mismatch• High thermal         conductivity
 
• Low power consumption
 
• Excellent transient characteristics
 
• High band gap 
 
 
commen 2inch size for sic substrates

2inch diameter Silicon Carbide (SiC) Substrate Specification 
GradeZero MPD GradeProduction GradeResearch GradeDummy Grade 
 
Diameter50.8 mm±0.2mm 
 
Thickness330 μm±25μm or 430±25um Or 1000um±25um 
 
Wafer OrientationOff axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI 
 
Micropipe Density≤0 cm-2≤5 cm-2≤15 cm-2≤100 cm-2 
 
Resistivity4H-N0.015~0.028 Ω•cm 
 
6H-N0.02~0.1 Ω•cm 
 
4/6H-SI≥1E5 Ω·cm 
 
Primary Flat{10-10}±5.0° 
 
Primary Flat Length18.5 mm±2.0 mm 
 
Secondary Flat Length10.0mm±2.0 mm 
 
Secondary Flat OrientationSilicon face up: 90° CW. from Prime flat ±5.0° 
 
Edge exclusion1 mm 
 
TTV/Bow /Warp≤10μm /≤10μm /≤15μm 
 
RoughnessPolish Ra≤1 nm 
 
CMP Ra≤0.5 nm 
 
Cracks by high intensity lightNone1 allowed, ≤2 mmCumulative length ≤ 10mm, single length≤2mm 
 
 
Hex Plates by high intensity lightCumulative area ≤1%Cumulative area ≤1%Cumulative area ≤3% 
 
Polytype Areas by high intensity lightNoneCumulative area ≤2%Cumulative area ≤5% 
 
 
Scratches by high intensity light3 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length 
 
 
edge chipNone3 allowed, ≤0.5 mm each5 allowed, ≤1 mm each 
 
 

picture size: 10x10x0.5mmt,
tolerance:±0.03mm
match depth x width: 0.4mmx0.5mm
TYPE:4H-semi
surface: polished (ssp or dsp)
Ra:0.5nm


 

FAQ

1. Q:What is your package ? Are they safe ?
A: we provide Automatic adsorption film box as package.
2.Q: What is your payment term ?
A:Our payment term is T/T 50% in advance ,50% before delivery .
3.Q:How can I get some samples?
A:Becauce customized shape products, we hope you can order min lot as sample.
4.Q: How long time we can get the samples ?
A: We send the samples in 10- 25 days after you confirm .
5.Q:How does your factory do regarding quality control ?
A:Quality first is our motto ,Workers always attach great importance to quality controlling from
the very beginning to the very end .

 



































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