2inch 3inch 4inch 6inch N Type GE Germanium Wafer With Low EPD

2inch 3inch 4inch 6inch N Type GE Germanium Wafer With Low EPD​

Ge wafer

Germanium is the material for making semiconductor devices and infrared optical devices. It plays an important role in the development of solid state physics and solid state electronics. Germanium has a melting density of 5.32g/cm 3, germanium may be classified as a thin scattered metal, germanium chemical stability, does not interact with air or water vapor at room temperature, but at 600~700 ℃, germanium dioxide is quickly generated. Does not work with hydrochloric acid, dilute sulfuric acid. When concentrated sulfuric acid is heated, germanium will slowly dissolve. In nitric acid and aqua regia, germanium is easily dissolved. The effect of alkali solution on germanium is very weak, but molten alkali in air can make germanium dissolve quickly. Germanium does not work with carbon, so it is melted in a graphite crucible and will not be contaminated by carbon. Germanium has good semiconductor properties, such as electron mobility, hole mobility and so on. The development of germanium still has great potential.

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Growth method

The growth method of germanium substrate comprises the following steps: providing a supporting substrate, the supporting substrate is a crystal material; The first germanium crystal layer is grown by first temperature epitaxy on the surface of the supporting substrate. The second germanium crystal layer is grown by second temperature epitaxy on the surface of the first germanium crystal layer, and the first temperature is lower than the second temperature. The advantages of the present invention is to put forward a kind of low temperature germanium epitaxial growth process, first of all, a layer of germanium layer, low temperature growth germanium epitaxial growth rate is low, a two-dimensional growth characteristics and complete relaxation, this thin layer of germanium layer at low temperature has many defects, prone to stress relaxed and dislocation annihilation, subsequently, then a layer of high temperature growth germanium epitaxial layer, the layer growth speed, The single crystal germanium layer with high crystal mass and complete relaxation can be obtained.