Active Member
|
[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
|
|
IRFP260MPBF N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3
FEATURES
Type : MOSFETS-Single
Packaging :Tube
Part state: ACTIVE
FET type : N - Channel
Technology : MOSFET (Metal Oxide)
Drain-source voltage (VDSS) : 200V
Current - Continuous Drains (ID) (at 25°C): 50A (Tc)
Driving voltage (maximum RDS ON, minimum RDS ON) :10V
VGS (th) with different IDs (maximum) : 4V @ 250µA
Gate charge (Qg) at different VGs (Max.) : 234nC @ 10V
Input capacitance (CISS) at different VDS (maximum): 4057pF @ 25V
VGS (maximum) : ±20V
Power Dissipation (Maximum) : 300W (Tc)
RDS ON (Max.) : 40 mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Install type: Through Hole
Supplier device package : TO-247AC
Package/enclosure : TO-247-3
