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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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ChongMing Group (HK) Int'l Co., Ltd

STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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Product Details

 

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STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

 

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT

 

■ LOWER ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ LOWER CRES/CIES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

 

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

 

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

 

Absolute Maximum ratings

SymbolParameterValueUnit
  

STGP7NC60HD

STGB7NC60HD

STGF7NC60HD 
VCESCollector-Emitter Voltage (VGS = 0)600V
VECREmitter-Collector Voltage20V
VGEGate-Emitter Voltage±20V
ICCollector Current (continuous) at TC = 25°C (#)2510A
ICCollector Current (continuous) at TC = 100°C (#)146A
ICM (1)Collector Current (pulsed)50A
IFDiode RMS Forward Current at TC = 25°C20A
PTOTTotal Dissipation at TC = 25°C8025W
 Derating Factor0.640.20W/°C
VISO

Insulation Withstand Voltage A.C.

(t = 1 sec; Tc = 25°C)

-2500V
TstgStorage Temperature– 55 to 150°C
TjOperating Junction Temperature

(1) Pulse width limited by max. junction temperature.

 

Figure 1: Package

 

 

Figure 2: Internal Schematic Diagram

 

 

 

 

 

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