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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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Stock Offer (Hot Sell)
| Part No. | Quantity | Brand | D/C | Package |
| ESP8266EX | 5982 | ESPRESSIF | 14+ | QFN32 |
| ETC1.6-4-2-3TR | 4563 | M/A-COM | 15+ | SMD |
| EX5418-EG11 | 7577 | EETI | 13+ | QFN |
| EXC7900-SG11 | 4967 | EETI | 13+ | QFN |
| EXCCET103U | 9515 | PANASONIC | 16+ | SMD |
| EZ80190AZ050SG | 2645 | ZILOG | 05+ | QFP |
| F2405S-1WR2 | 4629 | MORNSUN | 16+ | SIP |
| F65550B | 1918 | CHIPS | 13+ | QFP |
| FA5518N-A2-TE1 | 9586 | FUJITSU | 14+ | SOP-8 |
| FAN1112DX | 20504 | FAIRCHILD | 16+ | TO-252 |
| FAN3225TMPX | 3081 | FAIRCHILD | 16+ | DFN-8 |
| FAN3225TMX | 5365 | FAIRCHILD | 13+ | SOP-8 |
| FAN6862TY | 13420 | FAIRCHILD | 16+ | SSOT-6 |
| FAN9612MX | 7548 | FAIRCHILD | 12+ | SOP-8 |
| FC-135 32.7680KA | 4093 | EPSON | 13+ | SMD |
| FCB11N60TM | 12339 | FAIRCHILD | 15+ | TO-263 |
| FCX495TA | 46000 | ZETEX | 14+ | SOT-89 |
| FDB3632 | 8071 | FAIRCHILD | 14+ | TO-263 |
| FDC6330L | 7527 | FAIRCHILD | 04+ | SOT-163 |
| FDC6420C | 20575 | FAIRCHILD | 14+ | SOT-163 |
| FDD4141 | 9286 | FAIRCHILD | 16+ | TO-252 |
| FDD850N10L | 20646 | FAIRCHILD | 11+ | TO-252 |
| FDH055N15A | 7591 | FAIRCHILD | 15+ | TO-247 |
| FDL100N50F | 3233 | FAIRCHILD | 13+ | TO-264 |
| FDLL4148 | 25000 | FAIRCHILD | 15+ | LL34 |
| FDMS3604S | 5436 | FAIRCHILD | 16+ | QFN |
| FDMS86500L | 8142 | FAIRCHILD | 13+ | QFN-8 |
| FDMS86520L | 7901 | FAIRCHILD | 15+ | QFN |
| FDMS8672S | 6190 | FAIRCHILD | 16+ | QFN-8 |
| FDMS8692 | 20717 | FAIRCHILD | 16+ | QFN |
BC327 PNP general purpose transistor
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | −50 | V |
| VCEO | collector-emitter voltage | open base | − | −45 | V |
| VEBO | emitter-base voltage | open collector | − | −5 | V |
| IC | collector current (DC) | − | −500 | mA | |
| ICM | peak collector current | − | −1 | A | |
| IBM | peak base current | − | −200 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 °C; note 1 | − | 625 | mW |
| Tstg | storage temperature | −65 | +150 | °C | |
| Tj | junction temperature | − | 150 | °C | |
| Tamb | operating ambient temperature | −65 | +150 | °C |
Note 1. Transistor mounted on an FR4 printed-circuit board.
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
