NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

Features

• -5A, -30V. R_DS(ON) = 0.065W @ V_GS = -10V

                   R_DS(ON) = 0.1W @ V_GS = -4.5V.

• High density cell design for extremely low R_DS(ON).

• High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings T_A = 25°C unless otherwise noted

Notes:

1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by design while RqCA is determined by the user's board design.

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

    a. 42℃/W when mounted on a 1 in² pad of 2oz copper.

    b. 95℃/W when mounted on a 0.066 in² pad of 2oz copper.

    c. 110℃/W when mounted on a 0.0123 in² pad of 2oz copper.

Scale 1 : 1 on letter size paper

Stock Offer (Hot Sell)