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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

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Product Details

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

 

 

 

PNP − MJ15023, MJ15025*

Silicon Power Transistors

  The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.

 

 

Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V

• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

• Pb−Free Packages are Available*

 

MJ1502x = Device Code

x = 3 or 5

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

 

 

 

            ORDERING INFORMATION

Device Package Shipping
MJ15023 TO−204 100 Units / Tray
MJ15023G 

TO−204

(Pb−Free) 

100 Units / Tray
MJ15025 TO−204100 Units / Tray
MJ15025G 

TO−204

(Pb−Free)

100 Units / Tray

 

 

 

 

   There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

 

  The data of Figure 1 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

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