KSP2907A General Purpose Transistor

KSP2907A

General Purpose Transistor

• Collector-Emitter Voltage: VCEO= 60V

• Collector Power Dissipation: PC (max)=625mW

• Refer to KSP2907 for graphs

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage -60 V

VCEO Collector-Emitter Voltage -60 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -600 mA

PC Collector Power Dissipation 625 mW

TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C

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LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.