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SMAF Schottky Barrier Rectifier Diode / Low Leakage Schottky Diode SS36 3A 60V

Guangdong Huixin Electronics Technology Co., Ltd.
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Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

Contact name:Marissa Wang

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Guangdong Huixin Electronics Technology Co., Ltd.

SMAF Schottky Barrier Rectifier Diode / Low Leakage Schottky Diode SS36 3A 60V

Country/Region china
City & Province dongguan guangdong
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Product Details

 

SS36 SMAF 3A 60V Low Leakage Schottky Diode

SMAF Schottky Barrier Rectifier Diode / SS36 3A 60V Low Leakage Schottky Diode

 

 

SS32F~SS320F SMAF Datasheet.pdf

 

 

Features: 

 

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • For surface mounted applications
  • Low reverse leakage
  • Built-in strain relief,ideal for automated placement
  • High forward surge current capability
  • High temperature soldering guaranteed
  • 250 C/10 seconds at terminals

 

 

 

Mechanical Data:

 

 

  • Case : JEDEC SMAF Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Color band denotes cathode end 
  • Mounting Position : Any 
  • Weight : 0.0014 ounce, 0.038 grams

 

 

Maximum Ratings And Electrical Characteristics:

 

 

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

 

 

 

Parameter

 

SYMBOLSSS32SS34SS36SS38SS310SS315SS320UNITS

 

Maximum Repetitive Peak Reverse Voltage

 

VRRM20406080100150200Volts

 

Maximum RMS Voltage

 

VRMS1428425670105140Volts

 

Maximum DC Blocking Voltage

 

VDC20406080100150200Volts

 

Maximum Average Forward Rectifier Current at TL=100°C

 

IF(AV)3Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated loadIFSM80Amps

 

Maximum Instantaneous Forward Voltage at 3.0A

 

VF0.550.70.850.95Volts

 

Maximum DC Reverse Current at rated DC blocking voltage

 

TA=25°CIR0.50.05mA
TA=125°C5010

 

          

 

 

 

 

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