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[China]
Trade Verify
Address: Shenzhen, Futian District, Huaqiang North SEG Plaza, Room 6401 A
Contact name:Tony Zhang
Yougou Electronics (Shenzhen) Co., Ltd. |
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Upgrade your power supply with the FQP30N06 MOSFET - the maximum performance MOSFET for high voltage applications. Whether you need to power demanding applications or high voltage systems, the FQP30N06 has got you covered. With a drain to source voltage of up to 60 V and continuous drain current of 30A, this powerful N-channel MOSFET can handle the most challenging tasks with ease.
Made with metal oxide technology, the FQP30N06 MOSFET is ideally suited for high voltage applications with an input capacitance of 945 pF. Boasting a maximum Rds On of 40mOhm and a Gate Charge of 25 nC, it delivers top-notch efficiency even under heavy load conditions. Designed for thru-hole mounting, it comes in a TO-220-3 package, making it easy to install. No matter the working conditions, the FQP30N06 MOSFET can handle it. With an operating temperature range of -55°C to 175°C, it stays cool even under the most extreme temperatures. Upgrade your power supply today with the FQP30N06 MOSFET and experience unmatched efficiency and performance. Don't settle for less when you can have the best.
Category | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Package | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 945 pF @ 25 V |
Power Dissipation (Max) | 79W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Base Product Number | FQP30 |
