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IPB200N25N3G TO-263 IC Connectors , Discrete Semiconductor Devices Single FET MOSFET

STJK(HK) ELECTRONICS CO.,LIMITED

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IPB200N25N3G TO-263 IC Connectors , Discrete Semiconductor Devices Single FET MOSFET

Country/Region china
City & Province hong kong
Categories Connectors
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Product Details

IPB200N25N3G TO-263 Brand New And Original Discrete Semiconductor Single FET, MOSFET Integrated Circuit Chip

 

PRODUCT DESCRIPTION

 

Part number IPB200N25N3G is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.

 

For more information on IPB200N25N3G detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity IPB200N25N3G to your message. Send an email to stjkelec@hotmail.com for a quote now.

 

PRODUCT PROPERTIES

 

Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
IPB200

 

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