|
[China]
Trade Verify
Address: 27P , Block B , Duhui 100 , Zhonghang Road , Futian District , Shenzhen , China
Contact name:Biona
Hontai Machinery and equipment (HK) Co. ltd |
|
Verified Suppliers
|
|
|
half-bridge 62mm C-series 1200 V, 450 A dual IGBT modules FF450R12KT4 Wind Turbines
Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
• Wind Turbines
Electrical Features
• Extended Operation Temperature Tvj op
• Low Switching Losses
• Low VCEsat
• Unbeatable Robustness
• VCEsat with positive Temperature Coefficient
Mechanical Features
• 4 kV AC 1min Insulation
• Package with CTI > 400
• High Creepage and Clearance Distances
• High Power Density
• Isolated Base Plate
• Standard Housing
IGBT,Inverter
Maximum Rated Values
| Collector-emitter voltage | Tvj = 25°C | VCES | 1200 | V |
| Continuous DC collector current | TC = 100°C, Tvj max = 175°C Tvj max = 175°C | IC nom IC | 450 580 | A A |
| Repetitive peak collector current | tP = 1 ms | ICRM | 900 | A |
| Total power dissipation | TC = 25°C, Tvj max = 175°C | Ptot | 2400 | W |
| Gate-emitter peak voltage | VGES | +/-20 | V |
Characteristic Values
| Collector-emitter saturation voltage | IC = 450 A, VGE = 15 V Tvj = 25°C IC = 450 A, VGE = 15 V Tvj = 125°C IC = 450 A, VGE = 15 V Tvj = 150°C | VCE sat | 1,75 2,05 2,10 | 2,15 | V VV | |
| Gate threshold voltage | IC = 17,0 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,2 | 5,8 | 6,4 | V |
| Gate charge | VGE = -15 V ... +15 V | QG | 3,60 | µC | ||
| Internal gate resistor | Tvj = 25°C | RGint | 1,9 | Ω | ||
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | 28,0 | nF | ||
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | 1,10 | nF | ||
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | 5,0 | mA | ||
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | 400 | nA | ||
| Turn-on delay time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C | td on | 0,16 0,17 0,18 | µs µs µs | ||
| Rise time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C | tr | 0,045 0,04 0,05 | µs µs µs | ||
| Turn-off delay time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C | td off | 0,45 0,52 0,54 | µs µs µs | ||
| Fall time, inductive load | IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C | tf | 0,10 0,16 0,18 | µs µs µs | ||
| Turn-on energy loss per pulse | IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 9000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C | Eon | 19,0 30,0 36,0 | 19,0 30,0 36,0 | ||
| Turn-off energy loss per pulse | IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C | Eoff | 26,0 40,0 43,0 | mJ mJ mJ | ||
| SC data | VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C | ISC | 1800 | A | ||
| Thermal resistance, junction to case | IGBT / per IGBT | RthJC | 0,062 | K/W | ||
| Thermal resistance, caseto heatsink | EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) | RthCH | 0,03 | K/W | ||
| Temperature under switching conditions | Tvj op | -40 | 150 | °C |
