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[China]
Trade Verify
Address: NO.10, HEZHANG ROAD
Contact name:Wu
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. |
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Verified Suppliers
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SAW Grade Fe doped LT crystal Fe:LiTaO3 Lithium Tantanlate Wafer
Lithium tantalate (LiTaO3), has properties which make it useful for
SAW (surface acoustic wave) devices and, to a different
specification, for optical use. Wafers can be produced with varying
properties, such as "black" wafers free of pyroelectric discharge,
4" (100mm), orientation 36°, 39°, 42 °, 46°, 48°, X-CUT detailed
specifications, or with higher physical strength to withstand
processing during manufacture, resulting in higher yields.
Crystro's Fe:LiTaO3 is grown by Czochralski method.Max diameter reach 6inch,can offer
kinds of size per required.
Anhui Crystro participate in the kinds exhibitions every year:
Laser World of Photonics Munich, Shanghai, Photonics West in San
Francisco, CIOE in Shenzhen, etc.We looking forward to meet you.
Typical Specifications (for SAW use):
| Orientation | Diameter | Reference Flat Perpendicular to | Thickness | Surface Finish | ||
| 36° Y - Cut | 76.2 ± 0.7 (mm) | 22 ± 3 (mm) | X | 0.35 ± 0.03 (mm) | Front | Mirror Polished |
| 42° Y - Cut | X | 0.50 ± 0.03 (mm) | ||||
| X - Cut | 100.0 ± 0.7 (mm) | 32 ± 3 (mm) | Parallel to 112.2° Y | 0.50 ± 0.03 (mm) | Back | Ground |
Main Specifications:
| Material | LiTaO3 wafers(White or Black &Fe doped) | |
| Curie Temp | 603±2℃ | |
| Cutting Angle | X/Y/Z/X112Y/Y36/Y42/Y48/etc | |
| Diameter/size | 2”/3”/4" LT wafer or other size | |
| Tol(±) | <0.20 mm | |
| Thickness | 0.18 ~ 0.5mm or more | |
| Primary Flat | 22mm /32mm /42.5mm /57.5mm | |
| LTV (5mmx5mm) | <1µm | |
| TTV | <3µm | |
| Bow | -30<bow<30 | |
| Warp | <40µm | |
| PLTV(<0.5um) | ≥95%(5mm*5mm) | |
| Orientation Flat | All available | |
| Surface Type | Single Side Polished /Double Sides Polished | |
| Polished side Ra | <0.5nm | |
| Back Side Criteria | General is 0.2-0.5µm or as customized | |
| Edge Criteria | R=0.2mm or Bullnose | |
| Fe doped | Fe doped for saw grade LN< wafers | |
| Wafer Surface Criteria | Transmissivity | general:5.9x10-11<s<2.0*10-10 at 25℃ |
| Contamination, | None | |
| Particles ￠>0.3 µ m | <= 30 | |
| Scratch , Chipping | None | |
| Defect | No edge cracks, scratches, saw marks, stains | |
