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Flash Memory Chip TC58BYG1S3HBAI6 IC FLASH 2G PARALLEL 67VFBGA
he TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BYG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BYG1S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally
| Description | Value | |
|---|---|---|
| Architecture | Sectored | |
| Block Organization | Symmetrical | |
| Cell Type | SLC NAND | |
| Density | 2 Gb | |
| ECC Support | Yes | |
| Interface Type | Serial | |
| Maximum Operating Supply Voltage | 1.95 V | |
| Minimum Operating Supply Voltage | 1.7 V | |
| Mounting | Surface Mount | |
| Number of Bits per Word | 8 Bit | |
| Number of Words | 256 MWords | |
| Operating Temperature | -40 to 85 °C | |
| Page Size | 2 KB | |
| Pin Count | 67 | |
| Product Dimensions | 8 x 6.5 x 0.74(Max) | |
| Programming Voltage | 1.7 to 1.95 V | |
| Screening Level | Industrial | |
| Sector Size | 128 x 2048 KB | |
| Supplier Package | VFBGA | |
| Timing Type | Synchronous | |
| Typical Operating Supply Voltage | 1.8000 V |
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