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2SD1113 3 Pin Transistor Silicon NPN Triple Diffused power transistor

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[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

2SD1113(K) Silicon NPN Triple Diffused

Application

Igniter

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	V_CBO	300	V
Collector to emitter voltage	V_CEO	300	V
Emitter to base voltage	V_EBO	7	V
Collector current	I_C	6	A
Collector peak current	I_C(peak)	10	A
Collector power dissipation	P_C^*1	40	W
Junction temperature	T_j	150	°C
Storage temperature	T_stg	–55 to +150	°C

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