FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

FDS8858CZ

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ

P-Channel: -30V, -7.3A, 20.5mΩ

Features

Q1: N-Channel „ Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A „

Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel „

Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A „

Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A „

High power and handing capability in a widely used surface mount package

Fast switching speedt

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Application „

Inverter „ Synchronous Buck

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted

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