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SUM110P06-07L-E3 Transistor P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

SUM110P06-07L

P-Channel 60-V (D-S) 175℃ MOSFET

FEATURES

• TrenchFET Power MOSFET

• New Package with Low Thermal Resistance

APPLICATIONS

• Automotive

− 12-V Boardnet

− High-Side Switches

− Motor Drives

ABSOLUTE MAXIMUM RATINGS (T_C = 25℃ UNLESS OTHERWISE NOTED)

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	−60	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current ^d(T_J = 175℃)	T_C = 25℃	I_D	−110	A
Continuous Drain Current ^d(T_J = 175℃)	T_C = 125℃	I_D	−95	A
Pulsed Drain Current		I_DM	−240	A
Avalanche Current	L = 0.1 mH	I_AS	−75	A
Single Pulse Avalanche Energy ^a	L = 0.1 mH	E_AS	281	mJ
Power Dissipation	T_C = 25℃	P_D	375 ^c	W
Power Dissipation	T_A = 25℃ ^b	P_D	3.75	W
Operating Junction and Storage Temperature Range		T_J, Tstg	−55 to 175	℃

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