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PZT2907A Power Mosfet Transistor Si-Epitaxial Planar Switching Transistors

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PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

Absolute Maximum Ratings* T_A = 25°C unless otherwise noted

Symbol	Parameter	Value	Unit
V_CEO	Collector-Emitter Voltage	60	V
V_CBO	Collector-Base Voltage	60	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	800	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

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