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BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

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Anterwell Technology Ltd.

BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

BCP54 NPN General Purpose Amplifier

 

 

This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.

 

 

 

 

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

SymbolParameterValueUnits
VCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage45V
VEBOEmitter-Base Voltage5.0V
ICCollector Current - Continuous1.5A
TJ, TstgOperating and Storage Junction Temperature Range-55 to +150°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

 

 

 

 

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