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IRFBC40 Power Mosfet Transistor N-Channel Power MOSFETs Switch Mode

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[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

SMPS MOSFET IRFBC40A

HEXFET® Power MOSFET

Applications

• Switch Mode Power Supply ( SMPS )

• Uninterruptable Power Supply

• High speed power switching

Benefits

• Low Gate Charge Qg results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

• Effective Coss Specified ( See AN 1001)

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	6.2	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	3.9	A
I_DM	Pulsed Drain Current	25	A
P_D @T_C = 25°C	Power Dissipation	125	W
	Linear Derating Factor	1.0	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)

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