2N6052 PNP DARLINGTON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360

2N6052 PNP DARLINGTON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360

. . . designed for general−purpose amplifier and low frequency switching applications

• High DC Current Gain —

              hFE = 3500 (Typ) @ IC = 5.0 Adc

• Collector−Emitter Sustaining Voltage — @ 100 mA

                       VCEO(sus) = 80 Vdc (Min) — 2N6058

                                            100 Vdc (Min) — 2N6052, 2N6059

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate

The data of Figures 5, 6, and 7 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.