SI4835DDY-T1-GE3 Electronic Ic Chip Integrated circuit Chip IC Electronics transistor

SI4835DDY-T1-GE3 Electronic Ic Chip Integrated circuit Chip IC Electronics transistor

HEX INVERTER BUFFERS/DRIVERS WITH OPEN-DRAIN OUTPUTS



FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET® Power MOSFET

• 100 % Rg Tested

• 100 % UIS Tested

APPLICATIONS

• Load Switches

- Notebook PCs

- Desktop PCs

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

· Ratings at 25OC ambient temperature unless otherwise specified

· Single Phase, half wave, 60Hz, resistive or inductive load

· For capacitive load derate current by 20%

SYMBOLS SF 61 SF 62 SF 63 SF 64 SF 65 UNITS

Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 Volts Maximum Average Forward Rectified Current 0.375”(9.5mm) lead length at TA= 55℃ I(AV) 6.0 Amp Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) IFSM 150 Amps Maximum Instantaneous Forward Voltage @ 6.0A VF 0.95 1.25 Volts Maximum DC Reverse Current at Rated TA = 25℃ 5.0 DC Blocking Voltage TA = 125℃ IR 50 µA Maximum Reverse Recovery Time Test conditions IF=0.5A,IR=1.0A,IRR=0.25A trr 35 ns Typical Thermal Capavitance (Measured at 1.0MHz and applied rever voltage of 4.0V) CJ 60 40 PF Typical Thermal Resistance(NOTE 1) RθJA 30 ℃/W Operating Junction Temperature Range TJ (-55 to +150) ℃ Storage Temperature Range TSTG (-55 to +150) ℃

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