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NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

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[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23

Features

• Leading Trench Technology for Low RDS(on)

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

• Pb−Free Package is Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Cell Phone, Notebook, PDAs, etc.

ABSOLUTE MAXIMUM RATINGS(1)

Drain−to−Source Voltage VDSS −8.0 V

Gate−to−Source Voltage VGS ±8.0 V

Continuous Drain Current (Note 1) t ≤ 10 s TA = 25°C ID −3.7 A TA = 70°C −3.0

Power Dissipation (Note 1) t ≤ 10 s PD 0.96 W

Pulsed Drain Current tp = 10 s IDM −11 A

Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C

Source Current (Body Diode) IS −1.2 A

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C

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