Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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BD237 Power Mosfet Transistor , Low voltage NPN power transistors
Features
■ Low saturation voltage
■ NPN transistors
Applications
■ Audio, power linear and switching applications
Description
The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238.
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| BD235 | BD237 | |||
| VCBO | Collector-base voltage (IE = 0) | 60 | 100 | V |
| VCER | Collector-emitter voltage (RBE = 1 kΩ) | 60 | 100 | V |
| VCEO | Collector-emitter voltage (IB = 0) | 60 | 80 | V |
| VEBO | Emitter-base voltage (IC = 0) | 5 | V | |
| IC | Collector current | 2 | A | |
| ICM | Collector peak current (tp < ms) | 6 | A | |
| PTOT | Total dissipation at Tcase = 25°C | 25 | W | |
| Tstg | Storage temperature | -65 to 150 | °C | |
| TJ | Max. operating junction temperature | 150 | °C | |
Stock Offer (Hot Sell)
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