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PCF8583T Electronic IC Chips Clock and calendar with 240 x 8-bit RAM

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Anterwell Technology Ltd.

PCF8583T Electronic IC Chips Clock and calendar with 240 x 8-bit RAM

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

PCF8583 Clock and calendar with 240 x 8-bit RAM

 

General description

The PCF8583 is a clock and calendar chip, based on a 2048 bit static CMOS1 RAM organized as 256 words by 8 bits. Addresses and data are transferred serially via the two-line bidirectional I2C-bus. The built-in word address register is incremented automatically after each written or read data byte. Address pin A0 is used for programming the hardware address, allowing the connection of two devices to the bus without additional hardware.

 

The built-in 32.768 kHz oscillator circuit and the first 8 bytes of the RAM are used for the clock, calendar, and counter functions. The next 8 bytes can be programmed as alarm registers or used as free RAM space. The remaining 240 bytes are free RAM locations.

 

Features and benefits

  • „I 2C-bus interface operating supply voltage: 2.5 V to 6 V „
  • Clock operating supply voltage 1.0 V to 6.0 V at 0 °C to +70 °C „
  • 240 × 8-bit low-voltage RAM „
  • Data retention voltage: 1.0 V to 6.0 V „
  • Operating current (at fSCL = 0 Hz): max 50 μA „
  • Clock function with four year calendar „
  • Universal timer with alarm and overflow indication „
  • 24 hour or 12 hour format „
  • 32.768 kHz or 50 Hz time base „
  • Serial input and output bus (I2C-bus) „
  • Automatic word address incrementing „
  • Programmable alarm, timer, and interrupt function „
  • Slave addresses: A1h or A3h for reading, A0h or A2h for writing

 

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

SymbolParameterConditions MinMaxUnit
VDDsupply voltage  −0.8+7.0V
IDDsupply current  -50mA
ISSground supply current  -50mA
VIinput voltage  −0.8VDD + 0.8V
IIinput current  -10mA
IOoutput current  -10mA
Ptottotal power dissipation  -300mW
Pooutput power  -50mW
VESDelectrostatic discharge voltageHBM[1]-±3000V
MM[2]-±200V
Ilulatch-up current [3]-100mA
Tstgstorage temperature [4]-65+150°C
Tambambient temperatureoperating device -40+85°C

[1] Pass level; Human Body Model (HBM), according to Ref. 5 “JESD22-A114”.

[2] Pass level; Machine Model (MM), according to Ref. 6 “JESD22-A115”.

[3] Pass level; latch-up testing according to Ref. 7 “JESD78” at maximum ambient temperature (Tamb(max)).

[4] According to the NXP store and transport requirements (see Ref. 9 “NX3-00092”) the devices have to be stored at a temperature of +8 °C to +45 °C and a humidity of 25 % to 75 %. For long term storage products deviant conditions are described in that document.

 

Block diagram

 

 

 

Stock Offer (Hot Sell)

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