Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Silicon Z–Diodes
Features
Very sharp reverse characteristic
Very high stability
Electrical data identical with the devices
1N5221B...1N5267B
Low reverse current level
VZ–tolerance ± 5%
Applications
Voltage stabilization
A part of stock list
| C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
| RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
| C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
| ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
| TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
| C.I SCC2691AC1D24 | NXP | 1149+ | SOP-24 |
| C.I TP3057WM | TI | XM33AF | SOP-16 |
| C.I CD14538BE | TI | 33ADS8K | DIP-16 |
| C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
| C.I SN75179BP | TI | 57C50DM | DIP-8 |
| C.I L6219DS | ST | 135 | SOP-24 |
| CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
| INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
| CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
| C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
| CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
| RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
| C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
| RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
| CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
| CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
| RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
| RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
| TRIAC BTA26-600BRG | ST | 628 | TO-3P |
| CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
Absolute Maximum Ratings
Tj = 25C
| Parameter | Test Conditions | Symbol | Value | Union |
| Power dissipation | RthJA<300K/W, Tamb=25C | PV | 500 | mW |
| Z–current | Lz | PV/VZ | V | |
| Junction temperature | Tj | 175 | °C | |
| Storage temperature range | Tstg | -65 to +175 | °C |
