Anterwell Technology Ltd. |
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IRFPE50 Transistor Electronics Components electronic Power MOSFET
Features
• Avalanche rugged technology.
• Low input capacitance.
• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.
• Low RDS(on) : 0.30Ω(Typ.)
C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
C.I SCC2691AC1D24 | NXP | 1149+ | SOP-24 |
C.I TP3057WM | TI | XM33AF | SOP-16 |
C.I CD14538BE | TI | 33ADS8K | DIP-16 |
C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
C.I SN75179BP | TI | 57C50DM | DIP-8 |
C.I L6219DS | ST | 135 | SOP-24 |
CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
TRIAC BTA26-600BRG | ST | 628 | TO-3P |
CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
Descriptions
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain-source voltage VDSS 200 V
Gate-source voltage VGSS ±30 V
TC=25℃ 9 A Drain current (DC) * ID TC=100℃ 5.7 A
Drain current (Pulsed) * IDP 36 A
Drain power dissipation (TC=25℃) PD 30 W
Single pulsed avalanche energy ② EAS 162 mJ
Avalanche current (Repetitive) ① IAR 9 A
Repetitive avalanche energy ① EAR 7.2 mJ
Junction temperature TJ 150 °C
Storage temperature range Tstg -55~150 °C