IRFPE50 Transistor Electronics Components electronic Power MOSFET

IRFPE50 Transistor Electronics Components electronic Power MOSFET

Features

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Descriptions

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain-Source Voltage VDS 800 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at 10 V

TC = 25 °C ID 7.8 TC = 100 °C 4.9 A

Pulsed Drain Currenta IDM 31

Linear Derating Factor 1.5 W/°C

Single Pulse Avalanche Energyb EAS 770 mJ

Repetitive Avalanche Currenta IAR 7.8 A

Repetitive Avalanche Energya EAR 19 mJ

Maximum Power Dissipation TC = 25 °C PD 190 W

Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m