Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| NDT456P | 5000 | FAIRCHILD | 16+ | SOP8 |
| OB2268CCPA | 5000 | OB | 16+ | SOP8 |
| P2003EVG | 5000 | NIKOS | 13+ | SOP8 |
| P6SMB27CA | 5000 | VISHAY | 15+ | SMB |
| P89LPC932A1FDH | 5000 | NXP | 16+ | TSSOP |
| PC400J00000F SOP-5 | 5000 | SHARP | 16+ | SOP-5 |
| PIC16C711-04/P | 5000 | MICROCHIP | 14+ | DIP-18 |
| PIC16F716-I/P | 5000 | MICROCHIP | 14+ | DIP-18 |
| PIC16F84A-04I/SO | 5000 | MICROCHIP | 14+ | SOP18 |
| PIC16F886-I/SP | 5000 | MICROCHIP | 16+ | DIP |
| PIC18F4431-I/PT | 5000 | MICROCHIP | 16+ | TQFPQFP |
| RFD15P05SM | 5000 | INTERSIL | 13+ | TO-252 |
| RT8010GQW | 5000 | RICHTEK | 15+ | WDFN |
| SFH6156-4 | 5000 | VISHAY | 16+ | SOP4 |
| SI4880DY-T1-E3 | 5000 | VISHAT | 16+ | SOP-8 |
| SLF6028T-100M1R3-PF | 5000 | TDK | 14+ | SMD |
| SM15T15A | 5000 | ST | 14+ | DO-214AB |
| SM6S24A | 5000 | VISHAY | 14+ | DO-218 |
| SMAJ15A | 5000 | VISHAY | 16+ | SOD-214A |
| SMBJ6.0A | 5000 | VISHAY | 16+ | SMB |
| SMCJ54A-E3 | 5000 | VISHAY | 13+ | DO-214A |
| SN74AHC123ADR | 5000 | TI | 15+ | SOP-16 |
| SN74HC132N | 5000 | TI | 16+ | SOP |
| SN74HC148N TI 0401 | 5000 | TI | 16+ | SOP-16 |
| ST232ABDR | 5000 | ST | 14+ | SMD |
| ST232CWR | 5000 | ST | 14+ | SOP16 |
| STM8S103F2P6 | 5000 | ST | 14+ | SSOP |
| STP75NF75 | 5000 | ST | 16+ | TO-220 |
| STTH1R06U | 5000 | ST | 16+ | SMB |
| STU309D | 5000 | SAMHOP | 13+ | SOT-252 |
IRF7240PbF
HEXFET Power MOSFET
| VDSS | RDS(on) max | ID |
| -40V | 0.015@VGS = -10V | -10.5A |
| 0.025@VGS = -4.5V | -8.4A |
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
Absolute Maximum Ratings
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | -40 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ -10V | -10.5 | A |
| ID @ TA= 70°C | Continuous Drain Current, VGS @ -10V | -8.6 | A |
| IDM | Pulsed Drain Current | -43 | A |
| PD @TA = 25°C | Power Dissipation | 2.5 | W |
| PD @TA = 70°C | Power Dissipation | 1.6 | W |
| Linear Derating Factor | 20 | mW/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
