2SA970-GR general purpose mosfet Power Mosfet Transistor Low Noise Audio Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA970

Low Noise Audio Amplifier Applications

• Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz

                   : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz

• High DC current gain: h_FE = 200~700

• High breakdown voltage: VCEO = −120 V

• Low pulse noise. Low 1/f noise

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 Weight: 0.21 g (typ.)

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