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MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Anterwell Technology Ltd.

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

Country/Region	china
City & Province	shenzhen guangdong
Categories	Solar Chargers

Product Details

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

MJD112 (NPN)

MJD117 (PNP)

Complementary Darlington Power Transistors

DPAK For Surface Mount Applications

SILICON POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

MAXIMUM RATINGS

Rating	Symbol	Max	Unit
Collector−Emitter Voltage	V_CEO	100	Vdc
Collector−Base Voltage	V_CB	100	Vdc
Emitter−Base Voltage	V_EB	5	Vdc
Collector Current − Continuous Peak	I_C	2 4	Adc
Base Current	I_B	50	mAdc
Total Power Dissipation @ TC = 25°C Derate above 25°C	P_D	20 0.16	W W/°C
Total Power Dissipation* @ TA = 25°C Derate above 25°C	P_D	1.75 0.014	W W/°C
Operating and Storage Junction Temperature Range	T_J, T_stg	−65 to +150	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

MARKING DIAGRAMS