IR2113S digital integrated circuits Integrated Circuit Chip HIGH AND LOW SIDE DRIVER

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF

HIGH AND LOW SIDE DRIVER

Features

• Floating channel designed for bootstrap operation

  Fully operational to +500V or +600V

  Tolerant to negative transient voltage

  dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

  Separate logic supply range from 3.3V to 20V

  Logic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

Product Summary                                                                Packages

Description

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.

Functional Block Diagram

Stock Offer (Hot Sell)