Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Silicon High voltage general purpose npn transistor 2SD1290 Built in damper diode
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·For color TV horizontal deflection
output applications
| PIN | DESCRIPTION |
| 1 | Base |
| 2 | Collector;connected to mounting base |
| 3 | Emitter |
| SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT |
| VCBO | Collector-base voltage | Open emitter | 1500 | V |
| VEBO | Emitter-base voltage | Open collector | 5 | V |
| IC | Collector current (DC) | 3 | A | |
| ICM | Collector current (Pulse) | 10 | A | |
| PC | Collector power dissipation | TC=25℃ | 50 | W |
| Tj | Junction temperature | 130 | ℃ | |
| Tstg | Storage temperature | -55~130 | ℃ |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. | MAX. | UNIT |
| V(BR)EBO | Emitter-base breakdown voltage | IE=500mA; IC=0 | 5 | V | ||
| VCEsat | Collector-emitter saturation voltage | IC=2A; IB=0.75A | 5.0 | V | ||
| VBEsat | Base-emitter saturation voltage | IC=2A; IB=0.75A | 1.5 | V | ||
| ICBO | Collector cut-off current | VCB=750V; IE=0 VCB=1500V; IE=0 | 50 1 | μA mA | ||
| hFE | DC current gain | IC=2A ; VCE=10V | 3 | 8 | ||
| ts | Storage time | IC=2A ILeak=0.75A,LB=5μH | 3 | 7 | μs | |
| tf | Fall time | 1 | μs | |||
| VF | Diode forward voltage | IF=-4A,IB=0 | 2.2 | V |
PACKAGE OUTLINE
