Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| BC847A | 22000 | NXP | 14+ | SOT23 |
| AO4614 | 23145 | AOS | 14+ | SOP8 |
| MBTH10LT1G | 24000 | ON | 14+ | SOT-23 |
| MBRB20100CT | 24400 | ON | 16+ | TO-263 |
| SSM3K7002F | 24500 | TOSHIBA | 16+ | SOT-323 |
| PZT3906 | 24700 | PHILIPS | 13+ | SOT-223 |
| BZX84C2V7LT1G ON | 25000 | ON | 15+ | SOT-23 |
| DSS6NF31C223Q55B | 25000 | MURATA | 16+ | DIP |
| HEF4093BT | 25000 | NXP | 16+ | SOP |
| L78M05CDT | 25000 | ST | 14+ | TO-252 |
| LM358DR | 25000 | TI | 14+ | SOP |
| NDC7002N | 25000 | FAIRCHILD | 14+ | SOT163 |
| PS2501-1 | 25000 | NEC | 16+ | SOP-4 |
| ST485BDR | 25000 | ST | 16+ | SO-8 |
| TIP35C | 25000 | ST | 13+ | TO247 |
| Z0607MA | 25200 | ST | 15+ | TO-92 |
| W25Q80BVSSIG | 25210 | WINBOND | 16+ | SOP-8 |
| SMF05CT1G | 25410 | ON | 16+ | SC70-6 |
| SRV05-4.TCT | 25780 | SEMTECH | 14+ | SOT163 |
| BZX84C5V1LT1G | 25888 | ON | 14+ | SOT-23 |
| KBP310 | 26100 | SEP | 14+ | DIP-4 |
| PCF8583P | 27000 | NXP | 16+ | DIP8 |
| ER504 | 27111 | PANJIT | 16+ | DO-201AD |
| L78L33ACZ | 28000 | ST | 13+ | TO-92 |
| BC817-16LT1G | 28000 | ON | 15+ | SOT-23 |
| LVR016K | 28000 | RAYCHEM | 16+ | DIP |
| FDC604 | 28750 | FAIRCHILD | 16+ | SOT23-6 |
| L7812CD2T | 28888 | ST | 14+ | TO-263 |
| BC546B | 29000 | FAIRCHILD | 14+ | TO-92 |
| 1N4148 | 30000 | ST | 14+ | SOD123 |
MBRF20100CT Preferred Device
SWITCHMODETM Schottky Power Rectifier
SCHOTTKY BARRIER RECTIFIER
20 AMPERES, 100 VOLTS
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94 V-0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• Pb-Free Package is Available* Mechanic
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
MAXIMUM RATINGS (Per Leg)
Rating | Symbol | Value | Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 100
| V
|
Average Rectified Forward Current (Rated VR), TC = 133°C Total Device | IF(AV) | 10 20 | A |
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C | IFRM | 20 | A |
Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) | IFSM | 150 | A |
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) | IRRM | 0.5 | A |
Operating Junction and Storage Temperature Range (Note 1) | TJ, Tstg | -65 to +175 | °C |
Voltage Rate of Change (Rated VR) | dv/dt | 10000 | V/s |
RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Per Figure 3 | Viso1 | 4500 | V |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
PACKAGE DIMENSIONS
TO-220 FULLPAK
CASE 221D-03
ISSUE J
