1.1 Description
N-channel enhancement mode field-effect power transistor in a
plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175°C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S≤173 mJ
s ID≤75 A
s RDSon= 9.9 mΩ (typ)
s Ptot≤157 W.
Pin | Description |
1 | gate (g) |
2 | drain (d) |
3 | source (s) |
mb | mounting base, connected to drain (d) |