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PMV40UN2 TrenchMOS ultra low level FET silicon rectifier diode power rectifier diode

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Contact Us

[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong

Features

■ Ultra low level threshold

■ Surface mount package

Applications

■Battery management

■ High-speed switch.

Quick reference data

■ VDS ≤ 30 V

■ ID ≤ 4.9 A

■ Ptot ≤ 1.9 W

■ RDSon ≤ 47 mΩ

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology

Product availability: PMV40UN in SOT23.

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