Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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SPP04N60C3, SPB04N60C3
Final data SPA04N60C3
Cool MOSô Power Transistor
| VDS @ Tjmax | 650 | V |
| RDS(on) | 0.95 | Ω |
| ID | 4.5 | A |
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31 P-TO263-3-2
P-TO220-3-1
Maximum Ratings
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
Continuous drain current TC = 25 °C TC = 100 °C | ID |
4.5 2.8 |
4.51) 2.81) | A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | 13.5 | A |
| Avalanche energy, single pulse ID=3.4, VDD=50V | EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V | EAR | 0.4 | 0.4 | mJ |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
Drain Source voltage slope | dv/dt | 50 | V/ns | |
P-TO-220-3-1
P-TO-263-3-2 (D2-PAK)
P-TO-220-3-31 (FullPAK)
Stock Offer (Hot Sell)
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