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RSX101VA-30TR Shottky barrier diode Schottky Barrier Diode High Speed Switching Diode

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[China]

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Country/Region	china
City & Province	shenzhen guangdong
Categories	Generator Parts & Accessories

►Application

General rectification.

►Features

1) Small power mold type. (TUMD2 (1913) )

2) High reliability.

3) Low VF / Low IR. (0.43V at 1A / 40µA at 30V)

►Structure Silicon Epitaxial Planer

Absolute maximum ratings (Ta=25°C)

Parameter	SymboL	Limits	Unit
Reverse voltage (repetitive peak)	V_RM	30	V
Reverse voltage (DC)	V_R	30	V
Average rectified forward current	I_O	1	A
Forward current surge peak (60Hz / 1cyc.)	I_FSM	5	A
Junction temperature	Tj	150	°C
Storage temperature	Tstg	−40 to 150	°C

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