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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

Anterwell Technology Ltd.
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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

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Anterwell Technology Ltd.

TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

Country/Region china
City & Province shenzhen guangdong
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Product Details


High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs


Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak wavelength λp = 950 nm
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component
 
Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.
 
This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability
 

Typical Characteristics (Tamb = 25 °C unless otherwise specified)


STOCK LIST

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FAN5331SX1950FSC15+SOT23-5
AD5160BRJZ50-RL72450AD15+SOT23-8
DTC114ESA3450ROHM16+TO-92S
HT7130-12460HOLTEK13+SOT-89
ATMEGA16-16AU2500ATMEL15+QFP-44
74HCT04D7500NXP15+SOP
26PCAFA6D3000HONEYWELL15+SIP
ATMEGA168PA-AU2500ATMEL16+QFP
BYT230PIV-400900ST15+SOP
74F827N7500NXP16+DIP
BC817-1615000NXP15+SOT-23
AD711JN2450AD15+DIP
DS9034PCX4350DALLAS16+PCB
DAC08Q1825AD15+DIP-16
CY8C27543-24AXI2500CYPRESS16+QFP44
AOZ1031AI1600AOS15+SOP-8
ATMEGA8515-16AU2500ATMEL15+QFP-44
74LVC373APW7500NXP15+TSSOP
INA114BU1780TI16+SOP-16
BZV55-C369000NXP15+LL34
BC63915000FSC15+TO-92``
















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