Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
![IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET](http://img2.everychina.com/img/62/88/f0731e996c614f435dac6359c817-200x200c1-38e7/irfbc30_dual_power_mosfet_power_mosfet_transistor_n_channel_600v_1_8_ohm_to_220_powermesh_ii_mosfet.jpg)
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IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET
| TYPE | VDSS | RDS(on) | ID |
| IRFBC30 | 600 V | < 2.2 Ω | 3.6 A |
TO-220
■ TYPICAL RDS(on) = 1.8 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 600 | V |
| VDGR | Drain- gate Voltage (RGS = 20 kΩ) | 600 | V |
| VGS | Gate-source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at Tc = 25 ℃ | 3.6 | A |
| ID | Drain Current (continuous) at Tc = 100 ℃ | 2.3 | A |
| IDM (•) | Drain Current (pulsed) | 14 | A |
| Ptot | Total Dissipation at Tc = 25 ℃ | 75 | W |
| Derating Factor | 0.6 | W/℃ | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns |
| Tstg | Storage Temperature | -65 to 150 | ℃ |
| Tj | Max. Operating Junction Temperature | 150 | ℃ |
(•) Pulse width limited by safe operating area
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
TO-220 MECHANICAL DATA
